反氮化FeNiN薄膜制备L10-FeNi薄膜

Q3 Engineering

Journal of the Magnetics Society of Japan Pub Date : 2019-07-01 DOI:10.3379/MSJMAG.1907R002

K. Ito, M. Hayashida, M. Mizuguchi, T. Suemasu, H. Yanagihara, K. Takanashi

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引用次数: 4

摘要

通过对FeNiN薄膜进行脱氮处理，成功制备了a轴垂直于薄膜平面的l10 -FeNi薄膜。采用分子束外延的方法在srtio3(001)、mgal2o4(001)和MgO(001)衬底上外延生长了两种不同类型的20 nm厚FeNiN薄膜。在h2气氛下，在300℃下退火4h进行脱氮。外延关系为L1 0 -FeNi[001](100) ||衬底[100](001)和L1 0 -FeNi[010](100) |衬底[100](001)。通过磁转矩测量，估计L1 0 -FeNi薄膜在室温下的单轴磁各向异性能(K u)为4.4 × 10.6 erg/ cm3。这个K值对应于0.4的长范围阶数。

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Fabrication of L10-FeNi films by denitriding FeNiN films

L1 0 -FeNi films textured with the a-axis perpendicular to the film plane were successfully fabricated by denitriding FeNiN films. 20-nm-thick FeNiN films with two variants were epitaxially grown on SrTiO 3 (001), MgAl 2 O 4 (001), and MgO(001) substrates by molecular beam epitaxy. Denitriding was performed by annealing at 300 °C for 4 h under an H 2 gas atmosphere. The epitaxial relationships were L1 0 -FeNi[001](100) || substrate[100](001) and L1 0 -FeNi[010](100) || substrate[100](001). The uniaxial magnetic anisotropy energy (K u ) of the L1 0 -FeNi film was estimated to be 4.4 × 10 6 erg/cm 3 at room temperature by magnetic torque measurement. This K u value corresponds to a degree of long range order of 0.4.

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来源期刊

Journal of the Magnetics Society of Japan Engineering-Electrical and Electronic Engineering

CiteScore

2.00

自引率

0.00%

发文量