通过嵌入Si3N4衬底的碳纳米管阵列减少MEMS开关中的介电击穿

2014 International Semiconductor Conference (CAS) Pub Date : 2014-12-01 DOI:10.1109/SMICND.2014.6966387

M. Aldrigo, M. Dragoman

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引用次数: 0

摘要

在过去的几年中，MEMS开关因其在静电和射频应用中的开发而受到越来越多的关注。在本文中，我们讨论了通过嵌入碳纳米管(CNTs)阵列来提高MEMS中介电的可靠性，从而降低击穿阈值，从而提高器件在高驱动电压下的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Reducing dielectric breakdown in MEMS switches via a CNTs array embedded in a Si3N4 substrate

In the last years, MEMS switches have been gathering an increasing interest for their exploitation in several electrostatic and RF applications. In this paper we discuss about the enhancement of dielectric's reliability in MEMS by embedding an array of Carbon Nanotubes (CNTs) which allows the reducing of the breakdown threshold and, hence, to improve the device capabilities even in presence of high actuation voltages.

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2014 International Semiconductor Conference (CAS)

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