会议TU3B:热载波效应和混频器技术

IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-17 DOI:10.1109/MTT67880.2005.9387840

Ho Huang, Z. Bardai

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摘要

热载流子效应成为重要的考虑因素，因为器件尺寸缩小，以解决更高的工作频率。由于具有高集成度和低成本的潜力，SiGe混频器越来越重要。本次会议将讨论GaAs和硅电路中的热载子效应，5ghz混频器的开发，以及绝缘和硅衬底的可调谐元件和隔离问题。

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Session TU3B: Hot Carrier Effects and Mixer Technology

Hot carrier effects become an important consideration as device dimensions shrink to address higher frequency of operation. SiGe mixers have increasing importance due to potential for high level of integration and low cost. This session addresses the hot carrier effects in both GaAs and silicon circuits, 5 GHz mixer development, as well as tunable elements and isolation issues for insulating and silicon substrates.

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IEEE MTT-S International Microwave Symposium Digest, 2005.

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