绝缘子充电对击穿和调理的影响

J. Wetzer, P. Wouters
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引用次数: 28

摘要

作为研究微波管高压设计概念的一部分,研究了许多不同的绝缘体设计。对实测直流电流、局部放电活度和击穿电压的分析表明,绝缘子表面充电是击穿过程和调理过程中的关键机制。绝缘子参数不仅是击穿电压,还包括调理速度和对气体暴露或电荷泄漏的灵敏度。在所有这些方面,在阳极有磁场增强的绝缘体是优越的。如果选择阶梯式绝缘体形状,则阴极处的场增强危害较小。有效的调节至少需要有限的故障次数。有足够的条件击穿,所有测试的绝缘子几何形状达到击穿场超过12 kV/mm。>
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The effect of insulator charging on breakdown and conditioning
As part of a study on HV design concepts for microwave tubes, a number of different insulator designs have been studied. Analysis of the measured DC current, partial discharge activity and breakdown voltage shows that surface charging of insulators is a key mechanism in the breakdown process and in the conditioning process. Insulator parameters are not only the breakdown voltage, but also the conditioning speed and the sensitivity to gas exposure or charge leakage. In all these respects insulators with a field enhancement at the anode are superior. Field enhancements at the cathode are less harmful if stepped insulator shapes are chosen. Effective conditioning requires at least a limited number of breakdowns. With sufficient conditioning breakdowns, all insulator geometries tested reached a breakdown field exceeding 12 kV/mm. >
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