pecvd反应器薄膜沉积研究综述

C. Iliescu
{"title":"pecvd反应器薄膜沉积研究综述","authors":"C. Iliescu","doi":"10.56082/annalsarsciinfo.2021.1-2.12","DOIUrl":null,"url":null,"abstract":"The deposition of thin films by Plasma Enhanced Chemical Vapor Deposition (PECVD) method is a critical process in the fabrication of MEMS or semiconductor devices. The current paper presents an comprehensive overview of PECVD process. After a short description of the PECVD reactors main layers and their application such as silicon oxide, TEOS, silicon nitride, silicon oxynitride, silicon carbide, amorphous silicon, diamond like carbon are presented. The influence of the process parameters such as: chamber pressure, substrate temperature, mass flow rate, RF Power and RF Power mode on deposition rate, film thickness uniformity, refractive index uniformity and film stress were analysed. The main challenge of thin films PECVD deposition for Microelectromechanical Systems (MEMS)and semiconductor devices is to optimize the deposition parameters for high deposition rate with low film stress which and if is possible at low deposition temperature.","PeriodicalId":32445,"journal":{"name":"Annals Series on History and Archaeology Academy of Romanian Scientists","volume":"35 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A COMPREHENSIVE REVIEW ON THIN FILM DEPOSITIONS ON PECVD REACTORS\",\"authors\":\"C. Iliescu\",\"doi\":\"10.56082/annalsarsciinfo.2021.1-2.12\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The deposition of thin films by Plasma Enhanced Chemical Vapor Deposition (PECVD) method is a critical process in the fabrication of MEMS or semiconductor devices. The current paper presents an comprehensive overview of PECVD process. After a short description of the PECVD reactors main layers and their application such as silicon oxide, TEOS, silicon nitride, silicon oxynitride, silicon carbide, amorphous silicon, diamond like carbon are presented. The influence of the process parameters such as: chamber pressure, substrate temperature, mass flow rate, RF Power and RF Power mode on deposition rate, film thickness uniformity, refractive index uniformity and film stress were analysed. The main challenge of thin films PECVD deposition for Microelectromechanical Systems (MEMS)and semiconductor devices is to optimize the deposition parameters for high deposition rate with low film stress which and if is possible at low deposition temperature.\",\"PeriodicalId\":32445,\"journal\":{\"name\":\"Annals Series on History and Archaeology Academy of Romanian Scientists\",\"volume\":\"35 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Annals Series on History and Archaeology Academy of Romanian Scientists\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.56082/annalsarsciinfo.2021.1-2.12\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Annals Series on History and Archaeology Academy of Romanian Scientists","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.56082/annalsarsciinfo.2021.1-2.12","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

等离子体增强化学气相沉积(PECVD)方法沉积薄膜是制造MEMS或半导体器件的关键工艺。本文对PECVD工艺进行了全面的综述。简要介绍了PECVD反应器的氧化硅、TEOS、氮化硅、氮化硅、碳化硅、非晶硅、类金刚石碳等主要层及其应用。分析了腔室压力、衬底温度、质量流量、射频功率和射频功率模式等工艺参数对沉积速率、薄膜厚度均匀性、折射率均匀性和薄膜应力的影响。用于微机电系统(MEMS)和半导体器件的PECVD薄膜沉积的主要挑战是优化沉积参数,以在低沉积温度下实现高沉积速率和低薄膜应力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A COMPREHENSIVE REVIEW ON THIN FILM DEPOSITIONS ON PECVD REACTORS
The deposition of thin films by Plasma Enhanced Chemical Vapor Deposition (PECVD) method is a critical process in the fabrication of MEMS or semiconductor devices. The current paper presents an comprehensive overview of PECVD process. After a short description of the PECVD reactors main layers and their application such as silicon oxide, TEOS, silicon nitride, silicon oxynitride, silicon carbide, amorphous silicon, diamond like carbon are presented. The influence of the process parameters such as: chamber pressure, substrate temperature, mass flow rate, RF Power and RF Power mode on deposition rate, film thickness uniformity, refractive index uniformity and film stress were analysed. The main challenge of thin films PECVD deposition for Microelectromechanical Systems (MEMS)and semiconductor devices is to optimize the deposition parameters for high deposition rate with low film stress which and if is possible at low deposition temperature.
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