超临界CO2中电镀镍制备硅通孔(TSV)

The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) Pub Date : 2014-04-13 DOI:10.1109/NEMS.2014.6908770

H. Chuang, W. Lai, Chih-Chung Huang, A. Liao, C. Yeh

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引用次数: 2

摘要

三维集成电路(IC)结构可以通过堆叠多平面芯片提供更大的图图化区域，其中电信号可以通过硅通孔(tsv)垂直传导。因此，它的优点是降低了成本，减少了包装空间，尺寸和重量。在本研究中，制备并表征了tsv。在超临界CO2中电镀镍，在硅片上填满直径为70 μm的四个通孔。切片是为了观察和检查tsv的横切面。测量tsv的平均电阻0.01Ω。然后制造的tsv可以连续施加10安培的最大电流而不会烧毁。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fabrication of through-silicon vias (TSV) by nickel electroplating in supercritical CO2

3D integrated circuit (IC) structure could provide larger patterning areas by stacking the multi-planar chips, in which the electrical signals can be vertically conducted via through-silicon vias (TSVs). Thus, its advantages are lowered costs and reduced packaging space, size and weight. In this study, the TSVs are fabricated and characterized. Four through holes with a diameter of 70 μm on a silicon wafer are filled by nickel electroplating in supercritical CO2. The chip is cut for observation and examination of the cross-sectional view of the TSVs. The average electrical resistance across the TSVs was measured 0.01Ω. Then the fabricated TSVs can be applied a maximum current of 10 Amps continuously without burnout.

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The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

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