用于FBAR应用的微机械GaN薄膜的电磁建模

IF 0.1 0 THEATER

Teatro e Storia Pub Date : 2005-12-19 DOI:10.1109/SMICND.2005.1558725

D. Neculoiu, G. Konstantinidis, K. Mutamba, A. Takacs, D. Vasilache, C. Sydlo, T. Kostopoulos, A. Stavrinidis, A. Muller

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引用次数: 3

摘要

本文提出了一种新的FBAR结构电磁建模方法，该方法将压电/声学效应集成到商用Zeland IE3D电磁模拟器中。一个解析色散模型描述了压电材料与频率相关的有效介电常数。采用本体微加工技术制备了几种氮化镓基测试结构。从微波测量中提取模型参数。

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Electromagnetic modeling of micromachined GaN thin films for FBAR applications

The paper presents a new electromagnetic modeling approach for FBAR structures that integrates the piezoelectric/acoustic effects into a commercial Zeland IE3D electromagnetic simulator. An analytic dispersion model describes the piezoelectric material frequency dependent effective permittivity. Several GaN based test structures were fabricated using bulk micromachining technologies. From microwave measurements the model parameters were extracted.

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Teatro e Storia THEATER-

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