基于65nm SOTB CMOS的219 μ w 1d -to- 2d优先编码器

Xuan-Thuan Nguyen, Trong-Thuc Hoang, Hong-Thu Nguyen, Katsumi Inoue, C. Pham
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引用次数: 4

摘要

优先级编码器(PE)是内容可寻址存储器中不可缺少的组成部分。本文提出了基于一维阵列到二维阵列转换(1D-to-2D)方法的64位PE和256位PE两种高效架构,并在65nm薄埋氧化硅(SOTB) CMOS工艺中实现。由于其在大型PE施工中的优势,采用了一维到二维的方法。利用SOTB CMOS工艺,因为其突出的优点是低功耗和高性能配置使用背偏置电压。1.2 V下的测量结果表明,制备的PE256芯片在45 MHz下完全工作,功耗约为219 μW。此外,在睡眠模式下,0.6 V时漏功率降至0.34 μW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 219-μW 1D-to-2D-Based Priority Encoder on 65-nm SOTB CMOS
Priority encoder (PE) is recognized as an indispensable component in the content-addressable memory. In this paper, two efficient architecture of 64-bit PE and 256-bit PE using 1D-array to 2D-array conversion (1D-to-2D) method are presented and implemented in a 65-nm Silicon-on-thin-buried-oxide (SOTB) CMOS process. The 1D-to-2D method is exploited because of its advantages in large-sized PE construction. The SOTB CMOS process is utilized because of its prominent advantages of low-power and high-performance configuration using back bias voltages. The measurement results at 1.2 V showed that a fabricated PE256 chip was fully operational at 45 MHz and consumed approximately 219 μW. Additionally, in sleep mode, the leakage power dropped as low as 0.34 μW at 0.6 V.
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