深亚微米CMOS射频功率放大器效率提升技术

A. Banerjee, R. Hezar, Lei Ding
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引用次数: 5

摘要

在现代通信系统中,将射频功率放大器(PA)集成在CMOS技术中可以降低总解决方案成本,实现小尺寸。为了提高支持高峰均功率比(PAPR)调制信号的功率放大器的整体效率,研究人员正在探索新的发射机和放大器架构。本文回顾了近年来基于CMOS的放大器结构的一些进展,包括基于PWM的数字变送器和同相功率放大器,并提出了一种基于45纳米CMOS的新型多模同相放大器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Efficiency improvement techniques for RF power amplifiers in deep submicron CMOS
Integration of RF power amplifier (PA) in CMOS technology can help to reduce total solution cost and achieve small form factor in modern communication systems. To improve overall efficiency of the power amplifier supporting modulated signals with very high peak-to-average power ratio (PAPR), new transmitter and PA architectures are being explored by researchers. This paper reviews some of our recent developments in CMOS based PA architectures including PWM based digital transmitter and outphasing power amplifier and presents a new multi-mode outphasing PA designed in 45 nm CMOS.
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