{"title":"半导体结构中缺陷在漂移现象激发的磁场作用下的转变","authors":"G. Milenin, R. Redko","doi":"10.15407/spqeo26.02.147","DOIUrl":null,"url":null,"abstract":"The phenomenon of directed motion of mobile charged point defects in semiconductor structures under action of magnetic fields has been discussed. The features of defect drift in sign-changing magnetic fields have been studied. The effect of directional movement of charged defects under the combined action of constant and alternating magnetic fields has been analyzed. Analytical relations have been presented for the drift rate of defects in semiconductor structures under given impacts.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"9 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Transformation of defects in semiconductor structures under action of magnetic fields stimulated by drift phenomena\",\"authors\":\"G. Milenin, R. Redko\",\"doi\":\"10.15407/spqeo26.02.147\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The phenomenon of directed motion of mobile charged point defects in semiconductor structures under action of magnetic fields has been discussed. The features of defect drift in sign-changing magnetic fields have been studied. The effect of directional movement of charged defects under the combined action of constant and alternating magnetic fields has been analyzed. Analytical relations have been presented for the drift rate of defects in semiconductor structures under given impacts.\",\"PeriodicalId\":21598,\"journal\":{\"name\":\"Semiconductor physics, quantum electronics and optoelectronics\",\"volume\":\"9 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor physics, quantum electronics and optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.15407/spqeo26.02.147\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor physics, quantum electronics and optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15407/spqeo26.02.147","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Transformation of defects in semiconductor structures under action of magnetic fields stimulated by drift phenomena
The phenomenon of directed motion of mobile charged point defects in semiconductor structures under action of magnetic fields has been discussed. The features of defect drift in sign-changing magnetic fields have been studied. The effect of directional movement of charged defects under the combined action of constant and alternating magnetic fields has been analyzed. Analytical relations have been presented for the drift rate of defects in semiconductor structures under given impacts.
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