在TX和RX端端电阻均为4×Z0的单端点对点DRAM接口的收发器功率降低27%

2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers Pub Date : 2013-03-28 DOI:10.1109/ISSCC.2013.6487747

Soo-Min Lee, Jong-Hoon Kim, Jongsam Kim, Yunsaing Kim, Hyunbae Lee, J. Sim, Hong-June Park

{"title":"在TX和RX端端电阻均为4×Z0的单端点对点DRAM接口的收发器功率降低27%","authors":"Soo-Min Lee, Jong-Hoon Kim, Jongsam Kim, Yunsaing Kim, Hyunbae Lee, J. Sim, Hong-June Park","doi":"10.1109/ISSCC.2013.6487747","DOIUrl":null,"url":null,"abstract":"The transceiver power is reduced by 27% in the single-ended point-to-point DRAM interface by increasing the termination resistance to 4×Z0 at both ends of TX and RX. The resultant increase of ISI and reflection is compensated for at RX by using the 1-tap and 2-tap integrating decision-feedback equalizer (IDFE), respectively, where the reflection tap position and the tap coefficients are found automatically during the training mode. This improves the bathtub opening of a 4-inch FR4 channel from 20% to 62.5% at 5Gb/s in 0.13μm CMOS.","PeriodicalId":6378,"journal":{"name":"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers","volume":"146 1","pages":"308-309"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"A 27% reduction in transceiver power for single-ended point-to-point DRAM interface with the termination resistance of 4×Z0 at both TX and RX\",\"authors\":\"Soo-Min Lee, Jong-Hoon Kim, Jongsam Kim, Yunsaing Kim, Hyunbae Lee, J. Sim, Hong-June Park\",\"doi\":\"10.1109/ISSCC.2013.6487747\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The transceiver power is reduced by 27% in the single-ended point-to-point DRAM interface by increasing the termination resistance to 4×Z0 at both ends of TX and RX. The resultant increase of ISI and reflection is compensated for at RX by using the 1-tap and 2-tap integrating decision-feedback equalizer (IDFE), respectively, where the reflection tap position and the tap coefficients are found automatically during the training mode. This improves the bathtub opening of a 4-inch FR4 channel from 20% to 62.5% at 5Gb/s in 0.13μm CMOS.\",\"PeriodicalId\":6378,\"journal\":{\"name\":\"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers\",\"volume\":\"146 1\",\"pages\":\"308-309\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2013.6487747\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2013.6487747","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 9

摘要

在单端点对点DRAM接口中，通过将TX和RX两端的终端电阻增加到4×Z0，可以将收发器功率降低27%。由此产生的ISI和反射的增加在RX处分别通过使用1抽头和2抽头积分决策反馈均衡器(IDFE)进行补偿，其中反射抽头位置和抽头系数在训练模式中自动找到。这将在0.13μm CMOS中以5Gb/s速度将4英寸FR4通道的浴缸开度从20%提高到62.5%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A 27% reduction in transceiver power for single-ended point-to-point DRAM interface with the termination resistance of 4×Z0 at both TX and RX

The transceiver power is reduced by 27% in the single-ended point-to-point DRAM interface by increasing the termination resistance to 4×Z0 at both ends of TX and RX. The resultant increase of ISI and reflection is compensated for at RX by using the 1-tap and 2-tap integrating decision-feedback equalizer (IDFE), respectively, where the reflection tap position and the tap coefficients are found automatically during the training mode. This improves the bathtub opening of a 4-inch FR4 channel from 20% to 62.5% at 5Gb/s in 0.13μm CMOS.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers

自引率

0.00%

发文量