中子散射法研究α-铁硅单晶的有序性

W. Kolker, R. Wagner, E. Nembach
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引用次数: 13

摘要

用中子散射法研究了原生富铁硅单晶的有序态。硅的原子分数cSi在0.076 ~ 0.103之间;试样的淬火温度为723 ~ 873 K。观测到的(200)和(111)超晶格反射比通常由短程有序产生的反射要清晰得多。实验结果解释如下:所研究的所有样品都具有DO3超晶格。在给定的cSi下,远程序参量总是非常接近可能的最高值。反相畴非常小。在大多数情况下,其直径WD小于5纳米。只有当cSi接近临界浓度c*Si(TA)时,WD才会变大。c*Si(TA)描述了当前Fe-Si相图中的α - α 2相边界。然而,目前的结果排除了c*Si(TA)函数作为相边界的解释;c*Si(TA)仅与WD有关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ordering in α-iron-silicon single crystals investigated by neutron scattering
The state of order of primary iron-rich iron-silicon single crystals has been investigated by neutron scattering. The atomic fraction cSi of silicon was between 0.076 and 0.103; the temperatures TA from which the specimens were quenched ranged from 723 K to 873 K. The observed (200) and (111) superlattice reflections are much sharper than those usually produced by short-range order. The experimental results are interpreted as follows. All specimens investigated have the DO3 superlattice. The long-range order parameter is always very close to the highest value possible at given cSi. The antiphase domains are very small. In most cases their diameter WD is below 5 nm. Only if cSi approaches the critical concentration, c*Si(TA), does WD become large. c*Si(TA) describes the alpha - alpha 2 phase boundary in the current Fe-Si phase diagram. The present results, however, preclude the interpretation of the function c*Si(TA) as a phase boundary; c*Si(TA) only has bearing on WD.
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