{"title":"太赫兹量子级联激光器:10年的活性区和材料进展","authors":"J. Faist, G. Scalari, M. Fischer, M. Beck","doi":"10.1109/IRMMW-THZ.2011.6104752","DOIUrl":null,"url":null,"abstract":"Ten years after its first demonstration in the Terahertz, quantum cascade laser technology has made significant strides towards becoming a relevant device for real-world applications. A better understanding of the loss mechanism due to the injection process as well as the development of new materials such as the InGaAs/InGaSb/InP hold great promises for improving the maximum operating temperature of these devices.","PeriodicalId":6353,"journal":{"name":"2011 International Conference on Infrared, Millimeter, and Terahertz Waves","volume":"38 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Terahertz quantum cascade lasers: 10 years of active region and material progresses\",\"authors\":\"J. Faist, G. Scalari, M. Fischer, M. Beck\",\"doi\":\"10.1109/IRMMW-THZ.2011.6104752\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ten years after its first demonstration in the Terahertz, quantum cascade laser technology has made significant strides towards becoming a relevant device for real-world applications. A better understanding of the loss mechanism due to the injection process as well as the development of new materials such as the InGaAs/InGaSb/InP hold great promises for improving the maximum operating temperature of these devices.\",\"PeriodicalId\":6353,\"journal\":{\"name\":\"2011 International Conference on Infrared, Millimeter, and Terahertz Waves\",\"volume\":\"38 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 International Conference on Infrared, Millimeter, and Terahertz Waves\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRMMW-THZ.2011.6104752\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Conference on Infrared, Millimeter, and Terahertz Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRMMW-THZ.2011.6104752","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Terahertz quantum cascade lasers: 10 years of active region and material progresses
Ten years after its first demonstration in the Terahertz, quantum cascade laser technology has made significant strides towards becoming a relevant device for real-world applications. A better understanding of the loss mechanism due to the injection process as well as the development of new materials such as the InGaAs/InGaSb/InP hold great promises for improving the maximum operating temperature of these devices.