{"title":"基于衬底偏置的超低电源电压带隙基准","authors":"Yang-yang Peng, Wu Xiaobo, Ye Zhihao, Sun Yueming","doi":"10.1109/ICECE.2010.792","DOIUrl":null,"url":null,"abstract":"A CMOS bandgap reference (BGR) capable of operating at supply voltage of 0.9V was proposed in this paper. To guarantee its normal operation at ultra low supply voltage, the substrate bias techniques is used to reduce the threshold voltage. Meanwhile, an amplifier biased by subthreshold current is designed. This circuit is designed in tsmc 0.35μm CMOS technology. An average reference voltage of 658mV with a temperature coefficient of 18.5 ppm/_ is achieved.","PeriodicalId":6419,"journal":{"name":"2010 International Conference on Electrical and Control Engineering","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2010-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Ultra Low Supply Voltage Bandgap Reference Based on Substrate Bias\",\"authors\":\"Yang-yang Peng, Wu Xiaobo, Ye Zhihao, Sun Yueming\",\"doi\":\"10.1109/ICECE.2010.792\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A CMOS bandgap reference (BGR) capable of operating at supply voltage of 0.9V was proposed in this paper. To guarantee its normal operation at ultra low supply voltage, the substrate bias techniques is used to reduce the threshold voltage. Meanwhile, an amplifier biased by subthreshold current is designed. This circuit is designed in tsmc 0.35μm CMOS technology. An average reference voltage of 658mV with a temperature coefficient of 18.5 ppm/_ is achieved.\",\"PeriodicalId\":6419,\"journal\":{\"name\":\"2010 International Conference on Electrical and Control Engineering\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Conference on Electrical and Control Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECE.2010.792\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Electrical and Control Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECE.2010.792","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Ultra Low Supply Voltage Bandgap Reference Based on Substrate Bias
A CMOS bandgap reference (BGR) capable of operating at supply voltage of 0.9V was proposed in this paper. To guarantee its normal operation at ultra low supply voltage, the substrate bias techniques is used to reduce the threshold voltage. Meanwhile, an amplifier biased by subthreshold current is designed. This circuit is designed in tsmc 0.35μm CMOS technology. An average reference voltage of 658mV with a temperature coefficient of 18.5 ppm/_ is achieved.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
