GaN HEMT栅极驱动器瞬态增强LDO电路设计

2021 6th International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2021-10-22 DOI:10.1109/ICICM54364.2021.9660317

Li Wang, De-Zhong Zhou, Ningye He, Yuan Xu, Xiaoxiong He, Zhenhai Chen

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引用次数: 1

摘要

提出了一种用于GaN栅极驱动器的动态偏置瞬态增强型LDO电路。利用高速比较器，可以在大负载时动态切换LDO误差放大器的偏置电流。高速比较器的参考电压决定了动态偏置控制电路的响应时间。采用0.18 μm BCD (bibipolar - cmos - dmos)工艺设计LDO，仿真结果表明，当负载电流由0mA变为20mA，频率为1MHZ时，LDO欠激电压为输出电压的16.6%，恢复时间小于0.5us。

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Design of Transient Enhanced LDO Circuit for GaN HEMT Gate Driver

A dynamic bias transient enhanced LDO (Low Dropout regulator) circuit for GaN gate driver is presented in this paper. With high-speed comparator, the bias current of LDO error amplifier can be switched dynamically when large load occurs. The reference voltage of high-speed comparator determines the response time of dynamic bias control circuit. The LDO has been designed in 0.18 μm BCD (Bipolar-CMOS-DMOS) process, simulation results show that the proposed LDO undershoot voltage is 16.6% of output voltage and the recovery time is less than 0.5us when load current is changed from 0mA to 20mA by frequency is 1MHZ.

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2021 6th International Conference on Integrated Circuits and Microsystems (ICICM)

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