ICP刻蚀对基于inp的多量子阱微环激光器的影响

2011 IEEE International Conference of Electron Devices and Solid-State Circuits Pub Date : 2011-12-29 DOI:10.1109/EDSSC.2011.6117681

Xie Sheng, C. Zhiming, Yu Xin, Zhang Shilin, Li Xianjie, Chen Yan, Guo Weilian, Qi Lifang, Mao Luhong, Yu Jinlong

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引用次数: 1

摘要

采用不同化学性质的电感耦合等离子体(ICP)体系对inp基外延结构进行了干刻蚀。表面形貌表明，使用Cl2/CH4/Ar配方刻蚀的波导轮廓比使用Cl2/BCl3化学方法刻蚀的波导轮廓具有更好的表面和侧壁质量。为了验证ICP刻蚀的实际影响，制作了InP/AlGaInAs多量子阱微环激光器，并对其电学和光学性能进行了比较。实验结果表明，在我们的实验系统中，Cl2/CH4/Ar配方更适合制作基于inp的光电器件。

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Effect of ICP etching on InP-based multiple quantum wells microring lasers

Dry etching of InP-based epitaxial structure was performed by using inductively coupled plasma (ICP) system with different chemistries. The surface topographies shown that the waveguide profiles etched using the Cl2/CH4/Ar recipe have better surface and sidewall quality than that of the Cl2/BCl3 chemistry. To verify the practical influence of ICP etching, InP/AlGaInAs multiple quantum wells microring lasers were fabricated, and the electrical and optical properties were compared. The experimental results revealed that the Cl2/CH4/Ar recipe is preferable to the fabrication of InP-based optoelectronic devices in our experimental system.

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2011 IEEE International Conference of Electron Devices and Solid-State Circuits

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