具有图案介电背接触的砷化镓热光伏器件的严格耦合波分析

2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) Pub Date : 2021-06-20 DOI:10.1109/PVSC43889.2021.9518396

Madhan K. Arulanandam, J. Buencuerpo, M. Steiner, Eric J. Tervo, L. Kuritzky, E. Perl, B. Kayes, Justin A. Briggs, R. King

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引用次数: 2

摘要

原则上，砷化镓热光伏器件中的图像化介电背接触结构提高了子带隙反射率。采用严格耦合波分析方法研究了金属点接触直径和金属点接触间距对器件子带隙反射率的三维周期光栅效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Rigorous Coupled Wave Analysis of GaAs Thermophotovoltaic Devices with a Patterned Dielectric Back Contact

In principle, a patterned dielectric back contact structure in a GaAs thermophotovoltaic device boosts the sub-bandgap reflectance. Rigorous coupled wave analysis method is used to study the three dimensional (3D) periodic grating effects of metal point contact diameter and spacing on sub-bandgap reflectance of the device.

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2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)

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