{"title":"Sn含量对Pb1−xSnxTe电性能和导热性的影响","authors":"M. Orihashi, Y. Noda, Lidong Chen, T. Hirai","doi":"10.2320/MATERTRANS1989.41.1196","DOIUrl":null,"url":null,"abstract":"P-type Pb 1-x Sn x Te single crystals were prepared by the Bridgman method with different Sn content (x). Electrical conductivity (σ ), Hall coefficient (R H ) and thermal conductivity (κ) were measured in the temperature range from 300 to 700 K. The hole concentration (p) at 77 K changed in the range from 2.2 × 10 24 to 4.9 × 10 26 m -3 for a whole composition range, 0.0 ≤ x ≤ 1.0. The σ increased monotonously with increasing x, while the κ value exhibited a minimum at x = 0.25. The lattice thermal conductivity (κ lattice ) also changed with x showing a minimum at x = 0.25 ∼ 0.50. The carrier thermal conductivity (κ carrier ) was found to increase monotonously with increasing x. The ratio (σ/κ) of electrical conductivity to thermal conductivity was found to have a maximum at x = 0.50. These results indicate that the electrical and thermal properties are sensitively influenced by phonon scattering by the disordered atomic arrangements in the solid solution. The possible enhancement of thermoelectric performance was suggested by forming the Pb 1-x Sn x Te solid solutions.","PeriodicalId":18264,"journal":{"name":"Materials Transactions Jim","volume":"47 4-5 1","pages":"1196-1201"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Effect of Sn Content on the Electrical Properties and Thermal Conductivity of Pb1−xSnxTe\",\"authors\":\"M. Orihashi, Y. Noda, Lidong Chen, T. Hirai\",\"doi\":\"10.2320/MATERTRANS1989.41.1196\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"P-type Pb 1-x Sn x Te single crystals were prepared by the Bridgman method with different Sn content (x). Electrical conductivity (σ ), Hall coefficient (R H ) and thermal conductivity (κ) were measured in the temperature range from 300 to 700 K. The hole concentration (p) at 77 K changed in the range from 2.2 × 10 24 to 4.9 × 10 26 m -3 for a whole composition range, 0.0 ≤ x ≤ 1.0. The σ increased monotonously with increasing x, while the κ value exhibited a minimum at x = 0.25. The lattice thermal conductivity (κ lattice ) also changed with x showing a minimum at x = 0.25 ∼ 0.50. The carrier thermal conductivity (κ carrier ) was found to increase monotonously with increasing x. The ratio (σ/κ) of electrical conductivity to thermal conductivity was found to have a maximum at x = 0.50. These results indicate that the electrical and thermal properties are sensitively influenced by phonon scattering by the disordered atomic arrangements in the solid solution. The possible enhancement of thermoelectric performance was suggested by forming the Pb 1-x Sn x Te solid solutions.\",\"PeriodicalId\":18264,\"journal\":{\"name\":\"Materials Transactions Jim\",\"volume\":\"47 4-5 1\",\"pages\":\"1196-1201\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Transactions Jim\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.2320/MATERTRANS1989.41.1196\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Transactions Jim","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2320/MATERTRANS1989.41.1196","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16
摘要
采用Bridgman法制备了不同Sn含量(x)的p型pb1 -x Sn x Te单晶,在300 ~ 700 K温度范围内测量了其电导率(σ)、霍尔系数(R H)和导热系数(κ)。77 K时的空穴浓度(p)在整个组成范围内变化范围为2.2 × 1024 ~ 4.9 × 26 m -3, 0.0≤x≤1.0。σ值随x的增加而单调增加,κ值在x = 0.25时达到最小值。晶格导热系数(κ晶格)也随x的变化而变化,在x = 0.25 ~ 0.50处达到最小值。载流子导热系数(κ载流子)随x的增加而单调增加,电导率与导热系数之比(σ/κ)在x = 0.50时达到最大值。这些结果表明,固溶体中无序原子排列对声子散射有敏感的影响。提出了通过形成pb1 -x Sn x Te固溶体来提高热电性能的可能性。
Effect of Sn Content on the Electrical Properties and Thermal Conductivity of Pb1−xSnxTe
P-type Pb 1-x Sn x Te single crystals were prepared by the Bridgman method with different Sn content (x). Electrical conductivity (σ ), Hall coefficient (R H ) and thermal conductivity (κ) were measured in the temperature range from 300 to 700 K. The hole concentration (p) at 77 K changed in the range from 2.2 × 10 24 to 4.9 × 10 26 m -3 for a whole composition range, 0.0 ≤ x ≤ 1.0. The σ increased monotonously with increasing x, while the κ value exhibited a minimum at x = 0.25. The lattice thermal conductivity (κ lattice ) also changed with x showing a minimum at x = 0.25 ∼ 0.50. The carrier thermal conductivity (κ carrier ) was found to increase monotonously with increasing x. The ratio (σ/κ) of electrical conductivity to thermal conductivity was found to have a maximum at x = 0.50. These results indicate that the electrical and thermal properties are sensitively influenced by phonon scattering by the disordered atomic arrangements in the solid solution. The possible enhancement of thermoelectric performance was suggested by forming the Pb 1-x Sn x Te solid solutions.