半导体超晶格中的超快速畴形成

Twenty Seventh International Conference on Infrared and Millimeter Waves Pub Date : 2002-12-16 DOI:10.1109/ICIMW.2002.1076061

R. Scheuerer, F. Klappenberger, K. Renk, E. Schomburg, J. Allen, G. R. Ramian, Jeremy S. Scott, Kovsh, V. Ustinov, A. Zhukov

{"title":"半导体超晶格中的超快速畴形成","authors":"R. Scheuerer, F. Klappenberger, K. Renk, E. Schomburg, J. Allen, G. R. Ramian, Jeremy S. Scott, Kovsh, V. Ustinov, A. Zhukov","doi":"10.1109/ICIMW.2002.1076061","DOIUrl":null,"url":null,"abstract":"Presents experimental evidence for ultra-fast domain formation in a semiconductor superlattice. An InGaAs/InAlAs superlattice device was mounted in a corner cube. The superlattice device showed a region of negative differential conductance in the current-voltage characteristic for voltages larger than an onset voltage. When the superlattice device was irradiated with radiation smaller than 1.2 THz, the onset voltage shifted, with increasing THz radiation power, to lower voltages. Taking an analysis based on a drift-diffusion model into account, we suggest that dipole domains form within about 400 fs.","PeriodicalId":23431,"journal":{"name":"Twenty Seventh International Conference on Infrared and Millimeter Waves","volume":"148 1","pages":"15-16"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ultra-fast domain formation in a semiconductor superlattice\",\"authors\":\"R. Scheuerer, F. Klappenberger, K. Renk, E. Schomburg, J. Allen, G. R. Ramian, Jeremy S. Scott, Kovsh, V. Ustinov, A. Zhukov\",\"doi\":\"10.1109/ICIMW.2002.1076061\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Presents experimental evidence for ultra-fast domain formation in a semiconductor superlattice. An InGaAs/InAlAs superlattice device was mounted in a corner cube. The superlattice device showed a region of negative differential conductance in the current-voltage characteristic for voltages larger than an onset voltage. When the superlattice device was irradiated with radiation smaller than 1.2 THz, the onset voltage shifted, with increasing THz radiation power, to lower voltages. Taking an analysis based on a drift-diffusion model into account, we suggest that dipole domains form within about 400 fs.\",\"PeriodicalId\":23431,\"journal\":{\"name\":\"Twenty Seventh International Conference on Infrared and Millimeter Waves\",\"volume\":\"148 1\",\"pages\":\"15-16\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Twenty Seventh International Conference on Infrared and Millimeter Waves\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIMW.2002.1076061\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Twenty Seventh International Conference on Infrared and Millimeter Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIMW.2002.1076061","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

给出了半导体超晶格中超快速畴形成的实验证据。将InGaAs/InAlAs超晶格器件安装在角落立方体中。当电压大于起始电压时，超晶格器件在电流-电压特性中显示出负差分电导区域。当超晶格器件受到小于1.2太赫兹的辐射时，随着太赫兹辐射功率的增加，起始电压向更低的电压偏移。考虑到漂移-扩散模型的分析，我们认为偶极子畴在大约400fs内形成。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Ultra-fast domain formation in a semiconductor superlattice

Presents experimental evidence for ultra-fast domain formation in a semiconductor superlattice. An InGaAs/InAlAs superlattice device was mounted in a corner cube. The superlattice device showed a region of negative differential conductance in the current-voltage characteristic for voltages larger than an onset voltage. When the superlattice device was irradiated with radiation smaller than 1.2 THz, the onset voltage shifted, with increasing THz radiation power, to lower voltages. Taking an analysis based on a drift-diffusion model into account, we suggest that dipole domains form within about 400 fs.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Twenty Seventh International Conference on Infrared and Millimeter Waves

自引率

0.00%

发文量