电感退化LNAs的设计流程

Q3 Arts and Humanities
D. Guermandi, E. Franchi, A. Gnudi
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引用次数: 2

摘要

提出了在输入阻抗匹配约束下,探索集成电感退化低噪声放大器(LNA)设计参数空间的设计流程。它是基于标准电路仿真工具,可以很容易地自动化。将该方法应用于固定偏置电流下具有最小噪声系数(NF)的5.5 GHz 0.18 /spl mu/m CMOS LNA的设计。在5ma偏置电流下,实测NF为2.6 dB,输入反射系数小于-15 dB,与仿真结果吻合较好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A design flow for inductively degenerated LNAs
A design flow to explore the design parameters space of integrated inductively-degenerated low noise amplifiers (LNA), under the constraint of matched input impedance, is presented. It is based on standard circuit simulation tools and can be easily automated. The method is applied to the design of a 5.5 GHz 0.18 /spl mu/m CMOS LNA with minimum noise figure (NF) for a fixed bias current. The measured NF of 2.6 dB, with input reflection coefficient lower than -15 dB at 5 mA bias current, shows good agreement with simulations.
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来源期刊
Giornale di Storia Costituzionale
Giornale di Storia Costituzionale Arts and Humanities-History
CiteScore
0.20
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