超低功耗CMOS亚阈值电压基准,不需要电阻或bjt

Yang Liu, Chenchang Zhan, Lidan Wang
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引用次数: 3

摘要

本文提出了一种新颖的超低功率基准电压,可从电源电压降至0.9V以下。在本文提出的参考电路中,通过将零vgs NMOS晶体管的泄漏电流馈送到两个处于亚阈值区域的二极管连接的NMOS晶体管,从而产生PTAT电压;而CTAT电压是通过使用另一个NMOS晶体管的体二极管产生的。因此,无需电阻或bjt即可实现低电压、低功耗操作,因此芯片面积消耗小。该电路采用0.18 μm工艺设计。仿真结果表明,在- 30°C - 125°C范围内,即使电源电压只有900mV,也能提供10ppm/°C的808mV参考电压。此外,典型的功耗仅为10nW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An ultra-low power CMOS subthreshold voltage reference without requiring resistors or BJTs
This paper presents a novel ultra-low power voltage reference operational from supply voltage down to less than 0.9V. In the proposed reference circuit, the PTAT voltage is generated by feeding the leakage current of a zero-Vgs NMOS transistor to two diode-connected NMOS transistors, both of which are in subthreshold region; while the CTAT voltage is created by using the body-diodes of another NMOS transistor. Consequently, low-voltage, low-power operation can be achieved without requiring resistors or BJTs, hence with small chip area consumption. The proposed circuit is designed in a 0.18-μm process. Simulation results show that it is capable of providing an 808mV reference voltage with 10ppm/°C from −30°C–125°C even with only 900mV supply voltage. Moreover, the typical power consumption is only 10nW.
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