用于低功耗物联网系统的70-nA 13 ppm/°C全mosfet电压基准

Jianping Guo, Weimin Li, Yicheng Li, Siji Huang, Zhao Wang, Bing Mo, Dihu Chen
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引用次数: 5

摘要

本文提出了一种基于0.18 μm标准CMOS技术实现的低功耗全mosfet基准电压。为了提高基准电压的温度系数,提出了一种基于控制整体电压的基准电压补偿技术。在- 40°C至125°C范围内,建议的基准电压达到13 ppm/°C,而在常温下耗散70 nA的电源电流。当电源电压在1.3 V ~ 2.1 V范围内变化时,线路稳压为0.02%/V,由于级联电流反射,100Hz时电源抑制比(PSRR)为74 dB。此外,电流反射镜可以很容易地重新配置,以便在该设计中可以修剪输出电压。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 70-nA 13-ppm/°C All-MOSFET Voltage Reference for Low-Power IoT Systems
This paper presents a low-power All-MOSFET voltage reference implemented on a 0.18-μm standard CMOS technology. In order to improve the temperature coefficient (TC) of voltage reference, a TC compensation technique based on controlling bulk voltage is proposed. The proposed voltage reference achieves a TC of 13 ppm/°C from −40 °C to 125 °C while dissipating a supply current of 70 nA in normal temperature. The line regulation is 0.02%/V when the supply voltage varies from 1.3 V to 2.1 V, and the power supply rejection ratio (PSRR) at 100Hz is 74 dB due to the cascode current mirror. Moreover, the current mirror can be reconfigured easily so that the output voltage can be trimmed in this design.
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