金属靶反应磁控溅射制备Bi/sub - 4/Ti/sub - 3/O/sub - 12/薄膜及其评价

Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1994-08-07 DOI:10.1109/ISAF.1994.522409

T. Yamamoto, H. Matsuoka

{"title":"金属靶反应磁控溅射制备Bi/sub - 4/Ti/sub - 3/O/sub - 12/薄膜及其评价","authors":"T. Yamamoto, H. Matsuoka","doi":"10.1109/ISAF.1994.522409","DOIUrl":null,"url":null,"abstract":"As sputtered ferroelectric and [001] oriented Bi/sub 4/Ti/sub 3/O/sub 12/ thin films were prepared on a Pt/Ti/SiO/sub 2//Si substrate at a comparatively low temperature around 330 /spl deg/C, by a reactive magnetron sputtering using Bi and Ti metal target. The chemical composition of deposited film is determined by the multi-element structure of target designed by a sputtering yield of Bi and Ti, which was changed by the gas ratio of the Ar/sup +/ and O/sub 2/ and the value of input rf-power. Dielectric constant was 100 at 1 kHz. The remanent polarization and the coercive field were 7uC/cm/sup 2/ and 51.2 kV/cm, respectively.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"601 1","pages":"485-487"},"PeriodicalIF":0.0000,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Preparation of Bi/sub 4/Ti/sub 3/O/sub 12/ thin films by reactive magnetron sputtering using metal target and their evaluations\",\"authors\":\"T. Yamamoto, H. Matsuoka\",\"doi\":\"10.1109/ISAF.1994.522409\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As sputtered ferroelectric and [001] oriented Bi/sub 4/Ti/sub 3/O/sub 12/ thin films were prepared on a Pt/Ti/SiO/sub 2//Si substrate at a comparatively low temperature around 330 /spl deg/C, by a reactive magnetron sputtering using Bi and Ti metal target. The chemical composition of deposited film is determined by the multi-element structure of target designed by a sputtering yield of Bi and Ti, which was changed by the gas ratio of the Ar/sup +/ and O/sub 2/ and the value of input rf-power. Dielectric constant was 100 at 1 kHz. The remanent polarization and the coercive field were 7uC/cm/sup 2/ and 51.2 kV/cm, respectively.\",\"PeriodicalId\":20488,\"journal\":{\"name\":\"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics\",\"volume\":\"601 1\",\"pages\":\"485-487\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.1994.522409\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.1994.522409","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用反应磁控溅射的方法，在Pt/Ti/SiO/ sub2 //Si衬底上制备了[001]取向的Bi/sub 4/Ti/sub 3/O/sub 12/薄膜，温度较低，约为330 /spl℃。沉积膜的化学成分是由由Bi和Ti的溅射量设计的靶材的多元素结构决定的，而Ar/sup +/和O/sub 2/的气体比和输入rf功率的值会改变靶材的化学成分。在1khz时介电常数为100。残余极化和矫顽力场分别为7uC/cm/sup 2/和51.2 kV/cm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Preparation of Bi/sub 4/Ti/sub 3/O/sub 12/ thin films by reactive magnetron sputtering using metal target and their evaluations

As sputtered ferroelectric and [001] oriented Bi/sub 4/Ti/sub 3/O/sub 12/ thin films were prepared on a Pt/Ti/SiO/sub 2//Si substrate at a comparatively low temperature around 330 /spl deg/C, by a reactive magnetron sputtering using Bi and Ti metal target. The chemical composition of deposited film is determined by the multi-element structure of target designed by a sputtering yield of Bi and Ti, which was changed by the gas ratio of the Ar/sup +/ and O/sub 2/ and the value of input rf-power. Dielectric constant was 100 at 1 kHz. The remanent polarization and the coercive field were 7uC/cm/sup 2/ and 51.2 kV/cm, respectively.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics

自引率

0.00%

发文量