硅衬底强度增强取决于纳米结构形态

Kunal Kashyap, Amarendra Kumar, Chung-Yao Yang, M. T. Hou, J. Yeh
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引用次数: 0

摘要

硅纳米结构在许多不同的工业应用中得到了广泛的研究。在这里,我们提出了两种不同类型的纳米结构,硅纳米板和纳米孔由化学金属辅助湿法蚀刻制备,与抛光硅样品相比,它们的抗弯强度分别提高了3.7倍和6倍,强调了抗弯强度与纳米结构形态的依赖性。纳米结构底部的粗糙度导致应力集中增加,从而降低了抗弯强度。此外,该技术为柔性和可弯曲电子器件开辟了柔性硅衬底的途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Silicon substrate strength enhancement depending on nanostructure morphology
Silicon nanostructures are extensively being researched for many different applications for industries. Here we present two different types of nanostructures, silicon nanoplates and nanoholes fabricated by electroless metal assisted wet etching for enhancing the bending strength by ~3.7 fold and ~6 fold respectively as compared to polished silicon samples which emphasize the dependence of bending strength on nanostructure morphologies. Roughness at the nanostructure bottom cause stress concentration to increase which degrades the bending strength. Moreover, this technology can open a pathway of flexible silicon substrates for flexible and bendable electronics.
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