手机SDR的挑战与前景

2007 25th International Conference on Computer Design Pub Date : 2007-10-01 DOI:10.1109/ICCD.2007.4601903

U. Ramacher

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引用次数: 1

摘要

提供了一种非易失性半导体存储装置，其包括由一对MOS fet和一对MNOS fet组成的触发器电路，分别耦合到触发器电路的双稳输出端。存储装置还具有一对耦合的MOS fet，使其电流路径与触发器电路的一对MOS fet的电流路径平行。

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Challenges and prospects of SDR for mobile phones

A nonvolatile semiconductor memory apparatus is provided which comprises a flip-flop circuit formed of a pair of MOS FETs and a pair of MNOS FETs coupled to the bistable output terminals of the flip-flop circuit, respectively. The memory apparatus further has a pair of MOS FETs coupled to have the current paths in parallel with the current paths of the pair of MOS FETs of the flip-flop circuit.

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2007 25th International Conference on Computer Design

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