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引用次数: 0
摘要
智能社会对半导体的持续发展推动了闪存技术向更高密度、更低功耗和更低成本的方向发展。今年，推出了新一代3D NAND闪存，最多可堆叠96层字行层。首次使用4b/cell 3D NAND技术展示了超过1Tb密度的存储器。为了填补DRAM和闪存之间的巨大性能差距，提出了一种具有新型高速3D NAND的超低延迟闪存控制器。
Continued proliferation of semiconductors for a smarter society drives the evolution of flash memory technologies towards higher density, lower power consumption, and lower cost. This year, a new generation of 3D NAND Flash memory with up to 96-stacked word-line layers is introduced. For the first time, a memory with over 1Tb density is demonstrated using a 4b/cell 3D NAND technology. An ultra-low latency flash controller with a new high-speed 3D NAND is proposed in order to fill a large performance gap between DRAM and Flash memories.
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