先进封装中沉积铜的新型流平材料

T. Ma, Jiang Wang, Zifang Zhu, Peipei Dong
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引用次数: 0

摘要

电镀铜正迅速成为晶圆级封装的核心技术。虽然铜柱技术对半导体行业来说并不新鲜,但它并非没有重大挑战。最大的挑战之一是在高通量和多种设计下获得所需的共面性和凹凸形状。与此同时,材料的特性开始受到人们的关注。本文提出了一种新型的镀铜流平剂L118体系,该体系在不同的模式下表现出显著的电化学调制能力。利用XRD (x射线衍射光谱)和FIB(聚焦离子束)对铜柱的微观结构进行了研究,结果表明,添加了新型添加剂的铜具有优先织构性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Novel leveling materials for copper deposition in advanced packaging
Electroplated copper is rapidly becoming the core technology in wafer level packaging. Although copper pillar technology is not new to the semiconductor industry, it is not without significant challenges. One of the most challenges is to obtain desired co-planarity and bump shape under high throughput and various design. Meanwhile, material properties began to gain people's attention. This paper addresses the challenges with a novel class of copper plating leveling composition, L118 system, which has shown remarkable electrochemical modulation abilities on different patterns. XRD (X-ray diffraction spectra) and FIB (focused ion beam) are utilized to investigate the microstructure of the copper pillars, which exhibits that deposited copper with the novel additives is preferentially (111) textured.
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