用于汽车的40nm嵌入式SG-MONOS闪存宏，具有160MHz随机访问代码和超过10M周期的数据持久性

2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers Pub Date : 2013-03-28 DOI:10.1109/ISSCC.2013.6487704

T. Kono, T. Ito, T. Tsuruda, Takayuki Nishiyama, Tsutomu Nagasawa, Tomoya Ogawa, Y. Kawashima, H. Hidaka, T. Yamauchi

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引用次数: 41

摘要

本文介绍了40nm汽车用eFlash宏。有三个关键特征;1) 40nm SG-MONOS细胞，尺寸为下一代[1];2)快速随机读取访问(超过160MHz)和开发的感测放大器(SA);3)即使在结温(Tj)为170°C的情况下，也能实现可靠和快速的P/E操作的电路技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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40nm embedded SG-MONOS flash macros for automotive with 160MHz random access for code and endurance over 10M cycles for data

This paper presents 40nm eFlash macros for automotive. There are three key features; 1) a 40nm SG-MONOS cell scaled to the next generation of [1]; 2) a fast random-read-access (over 160MHz) and the developed sense amplifier (SA); and, 3) circuit techniques for reliable and fast P/E operations even at the junction temperature (Tj) of 170°C.

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2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers

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