多晶碲化铋合金热电性能的厚度依赖性

A.W. Russell, H.J. Goldsmid
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引用次数: 2

摘要

结果表明,在局部塞贝克系数与取向有关的多晶材料中,平均塞贝克系数应取决于厚度。例如,已知本征单晶碲化铋的塞贝克系数是各向异性的。因此,在近本征多晶碲化铋合金上测量了塞贝克系数作为厚度的函数。正如预期的那样,当样品厚度小于晶粒尺寸时,塞贝克系数下降。该效应的大小约为15 μV/°C,与单晶材料的已知参数预测的数量级相同,尽管还不可能对该问题进行精确的理论处理。当温度降低时,材料就变成了外在导体,平均塞贝克系数的厚度依赖性就消失了,因为局部塞贝克系数不再依赖于方向。上述结果是通过仔细的研磨和抛光技术获得的。采用粗磨法对试样进行类似实验,塞贝克系数随厚度的减小而增大。这种效应可以暂时用力学损伤来解释,特别是晶粒沿着其基面分裂。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thickness-dependence of the thermoelectric properties of a polycrystalline bismuth telluride alloy

It is shown that the average Seebeck coefficient should depend on thickness in any polycrystalline material in which the local Seebeck coefficient is orientation-dependent. It is known, for example, that the Seebeck coefficient of intrinsic single-crystal bismuth telluride is anisotropic. Thus, measurements of the Seebeck coefficient as a function of thickness have been made on a near-intrinsic polycrystalline bismuth telluride alloy. As expected, the Seebeck coefficient falls when the sample thickness becomes smaller than the grain size. The magnitude of the effect, amounting to about 15 μV/°C, is of the order predicted from the known parameters of single crystal material, though an exact theoretical treatment of the problem has not been possible. On lowering the temperature, so that the material becomes an extrinsic conductor, the thickness-dependence of the average Seebeck coefficient disappears, since the local Seebeck coefficient is then no longer orientation-dependent.

The above results were obtained using careful grinding and polishing techniques. Similar experiments carried out using coarse grinding of the samples led to an increase of the Seebeck coefficient with decreasing thickness. This effect is tentatively explained in terms of mechanical damage, notably the splitting of the grains along their basal planes.

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