基于各向异性易轴倾斜导体阻抗滞回开关的电流控制磁记忆

2017 IEEE 7th International Conference Nanomaterials: Application & Properties (NAP) Pub Date : 2017-09-01 DOI:10.1109/NAP.2017.8190404

Julian Gonzalez, M. Ipatov, V. Zhukova, A. Zhukov

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引用次数: 1

摘要

本文提出了一种在倾斜各向异性易轴导体中基于磁阻抗效应的电流控制磁记忆器件的原理。结果表明，通过施加电流脉冲，表面磁化可以在两种稳定状态之间可控地切换，并且可以通过感应阻抗来检测磁化状态。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Current controlled magnetic memory based on hysteretic switching of impedance in conductor with inclined anisotropy easy axis

Here we propose a principle of a current controlled magnetic memory device based on magnetoimpedance (MI) effect in a conductor with inclined anisotropy easy axis. It was demonstrated that the surface magnetization can be switched controllably between two stable states by applying current pulses, and the magnetization state can be detected by sensing the impedance.

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2017 IEEE 7th International Conference Nanomaterials: Application & Properties (NAP)

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