阿贝尔格场理论中的拓扑项

M. Anosova, C. Gattringer, D. Goschl, T. Sulejmanpasic, P. Torek
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引用次数: 6

摘要

在这篇贡献中,我们重新审视了阿贝尔晶格场理论中拓扑电荷的晶格离散化。该构造脱离了规范场最初的非紧致离散化,在吸收了规范场的$2\pi$位移后,导致了广义的Villain作用,其中也包括拓扑项。二维和四维的拓扑电荷可以只用整数值的Villain变量来表示。我们测试了拓扑电荷的各种性质,特别分析了二维的指标定理,并讨论了四维的威滕效应。作为我们公式的一个应用,我们给出了真空角$\theta = \pi$下二维U(1)规范希格斯模型的模拟结果,其中我们使用合适的世界线/世界表表示来克服非零$\theta$处的复杂作用问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Topological terms in abelian lattice field theories
In this contribution we revisit the lattice discretization of the topological charge for abelian lattice field theories. The construction departs from an initially non-compact discretization of the gauge fields and after absorbing $2\pi$ shifts of the gauge fields leads to a generalized Villain action that also includes the topological term. The topological charge in two, as well as in four dimensions can be expressed in terms of only the integer-valued Villain variables. We test various properties of the topological charge and in particular analyze the index theorem in two dimensions and discuss the Witten effect in 4-d. As an application of our formulation we present results from a simulation of the 2-d U(1) gauge Higgs model at vacuum angle $\theta = \pi$, where we use a suitable worldline/worldsheet representation to overcome the complex action problem at non-zero $\theta$.
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