埋地光栅分布反馈激光器，λ =1.51 μ m

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147304

J. Andrews, E. Vangieson, R. Enstrom, J.R. Appert, J. Kirk, N. Carlson

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引用次数: 1

摘要

报道了采用两步有机金属化学气相沉积(OMCVD)外延生长分布式反馈(DFB)激光器，其中反馈光栅是一系列高折射率InGaAsP段(第一次生长)完全嵌入低折射率InP(第二次生长)。在埋地光栅DFB (BG-DFB)激光器中，通过改变光栅层厚度或光栅与有源区的距离，可以精确地调整激光光模与反馈光栅的耦合系数Kl。在不改变激光器波导参数的情况下，耦合系数可以在较大范围内调节。通过调整光栅蚀刻参数，可以改变光栅的占空比(InGaAsP光栅段宽度与光栅周期的比值)。这为优化光栅表面发射器激光器的二阶光栅的反射率和输出耦合提供了另一种方法

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Buried grating distributed feedback laser at lambda =1.51 mu m

The growth of a distributed feedback (DFB) laser by two steps of organometallic chemical vapor deposition (OMCVD) epitaxy in which the feedback grating is a series of higher index of refraction InGaAsP segments (first growth) completely embedded in lower index InP (second growth) is reported. In the buried grating DFB (BG-DFB) laser, the coupling coefficient (Kl) of the laser optical mode to the feedback grating can be reproducibly and accurately adjusted by changing the thickness of the grating layer or the distance of the grating from the active region. The coupling coefficient can be adjusted over a large range without altering the waveguide parameters of the laser. The duty cycle (ratio of InGaAsP grating segment width to grating period) of the grating can be changed by adjusting the grating etch parameters. This provides another means to optimize the reflectivity and output coupling of second order gratings for grating surface emitter lasers.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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