{"title":"赝二元化合物中态的电子密度。2非对角线随机性的影响","authors":"J. Inoue, M. Shimizu","doi":"10.1088/0305-4608/18/12/009","DOIUrl":null,"url":null,"abstract":"For pt.I see ibid., vol.17, p.2067 (1987). A simple method to calculate the electronic density of states is developed by making use of the coherent potential approximation and the recursion method by taking account of the randomness of atomic potentials and transfer integrals. This is a generalisation of the method developed previously. An application to calculate the density of states is given for Y(Mn-Co)2 Laves phase pseudobinary compounds by using the tight-binding d-band model.","PeriodicalId":16828,"journal":{"name":"Journal of Physics F: Metal Physics","volume":"842 1","pages":"2577-2581"},"PeriodicalIF":0.0000,"publicationDate":"1988-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electronic density of states in pseudobinary compounds. II. The effect of off-diagonal randomness\",\"authors\":\"J. Inoue, M. Shimizu\",\"doi\":\"10.1088/0305-4608/18/12/009\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For pt.I see ibid., vol.17, p.2067 (1987). A simple method to calculate the electronic density of states is developed by making use of the coherent potential approximation and the recursion method by taking account of the randomness of atomic potentials and transfer integrals. This is a generalisation of the method developed previously. An application to calculate the density of states is given for Y(Mn-Co)2 Laves phase pseudobinary compounds by using the tight-binding d-band model.\",\"PeriodicalId\":16828,\"journal\":{\"name\":\"Journal of Physics F: Metal Physics\",\"volume\":\"842 1\",\"pages\":\"2577-2581\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Physics F: Metal Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/0305-4608/18/12/009\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics F: Metal Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/0305-4608/18/12/009","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electronic density of states in pseudobinary compounds. II. The effect of off-diagonal randomness
For pt.I see ibid., vol.17, p.2067 (1987). A simple method to calculate the electronic density of states is developed by making use of the coherent potential approximation and the recursion method by taking account of the randomness of atomic potentials and transfer integrals. This is a generalisation of the method developed previously. An application to calculate the density of states is given for Y(Mn-Co)2 Laves phase pseudobinary compounds by using the tight-binding d-band model.