$2-\mu \ mathm {m}$窗口光通信高增益掺铥氧化碲波导放大器

K. M. Kiani, Henry Frankic, R. Mateman, A. Leinse, A. Knights, J. Bradley
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引用次数: 0

摘要

在这项工作中,我们在氮化硅(Si3N4)波导平台上提出了一种掺铥氧化碲(TeO2:Tm3+)波导放大器,在1607 nm泵浦下,1870 nm的内部净增益为14.7 $\text{dB}$,对应于2.96 dB/cm。增益测量是在一个1.0厘米长的芯片上实现的直波导、回形针波导和5厘米长的螺旋波导中进行的。该器件采用cmos兼容和晶圆级加工步骤制造,能够与现有的光子集成电路(PIC)技术兼容。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High Gain Thulium-Doped Tellurium Oxide Waveguide Amplifier for Optical Communication in the $2-\mu \mathrm{m}$ Window
In this work, we present on a thulium-doped tellurium oxide (TeO2:Tm3+) waveguide amplifier on a silicon nitride (Si3N4) waveguide platform with 14.7 $\text{dB}$ internal net gain at 1870 nm under 1607 nm pumping, corresponding to 2.96 dB/cm. Gain measurements were carried out in straight, paperclip and 5-cm-long spiral waveguides realized on a 1.0-cm-long chip. The device is fabricated using CMOS-compatible and wafer-scale processing steps, enabling compatibility with existing photonic integrated circuit (PIC) technology.
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