扩散炉LPCVD氮化过程动态行为的创新方法:设备优化/先进过程控制/无污染制造

Satyajit Shinde, Chee Huei Chan, Marcus Minchew, Lawrence Mbonu
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引用次数: 1

摘要

氮化膜低压化学气相沉积(LPCVD)工艺在半导体工业中是众所周知的。本文从两个方面探讨了扩散炉LPCVD氮化工艺改进的创新途径。首先是通过实施独特的LTP(低温吹扫)来延长石英的使用寿命,而不影响颗粒的性能。其次,石英寿命延长对不同区域晶圆均匀性的影响及补偿方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Innovative Approach on Dynamic Behavior of LPCVD Nitride Process on Diffusion Furnace : Equipment Optimization/Advanced Process Control/Contamination Free Manufacturing
Nitride film LPCVD (Low Pressure Chemical Vapor Deposition) process is well known in semiconductor industry. The paper covers an innovative approach in touching two aspects of improvement in LPCVD nitride process in diffusion furnace. First is the extension of quartz life use by implementation of unique LTP (Low Temperature Purge) without affecting particle performance. Secondly, the impact of extended quartz life on the wafer uniformity across the different zones and methodology to compensate it.
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