一个370-fJ/b, 0.0056 mm2/DQ, 4.8 gb /s DQ的HBM3带波特率自跟踪环路接收器

H. Ko, Soyeong Shin, Chan-Ho Kye, Sangyoon Lee, Jaekwang Yun, Hae-Kang Jung, Doobock Lee, Suhwan Kim, D. Jeong
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引用次数: 7

摘要

本文提出了一种用于HBM3的数据(DQ)接收器,该接收器具有自跟踪环路,可以跟踪由于电压或热漂移而导致的DQ和数据频闪(DQS)之间的相位偏差。自跟踪环路利用模拟辅助波特率鉴相器实现低功耗和小面积。所提出的脉冲电荷鉴相器(PC)将相位偏差转换为电压差,并从电压差中检测相位偏差。提出了一种补偿PD不匹配的偏移校准方案。所提出的校准方案利用HBM的写入训练,不需要任何额外的传感电路。该DQ接收器采用65 nm CMOS工艺,在4.8 Gb/s下的功率效率为370 fJ/b,占用面积为0.0056 mm2。实验结果表明,在${a}\pm 10$%的电源变化下,DQ接收机的工作性能没有下降。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 370-fJ/b, 0.0056 mm2/DQ, 4.8-Gb/s DQ Receiver for HBM3 with a Baud-Rate Self-Tracking Loop
This paper presents a data (DQ) receiver for HBM3 with a self-tracking loop that tracks a phase skew between DQ and data strobe (DQS) due to a voltage or thermal drift. The self-tracking loop achieves low power and small area by utilizing an analog-assisted baud-rate phase detector. The proposed pulse-to-charge (PC) phase detector (PD) converts the phase skew to a voltage difference and detects the phase skew from the voltage difference. An offset calibration scheme that can compensates for a mismatch of the PD is also proposed. The proposed calibration scheme operates without any additional sensing circuits by taking advantage of the write training of HBM. Fabricated in 65 nm CMOS, the DQ receiver shows a power efficiency of 370 fJ/b at 4.8 Gb/s and occupies 0.0056 mm2. The experimental results show that the DQ receiver operates without any performance degradation under ${a}\pm 10$% supply variation.
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