可见盲GaN/AlGaN p-i-n光电二极管的光响应模拟

2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2010-10-07 DOI:10.1109/NUSOD.2010.5595682

X. D. Wang, W. D. Hu, X. Chen, L. Wang, X. Y. Li, W. Lu

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引用次数: 1

摘要

对可见盲GaN/AlGaN p-i-n光电二极管的光谱光响应特性进行了数值研究。研究了吸收层厚度和n层厚度对光响应光谱的影响。我们的工作表明，吸收层厚度和n层厚度分别对光响应光谱的峰值和短波边的抑制比有重要影响。

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Photoresponse simulation of visible blind GaN/AlGaN p-i-n photodiode

The spectral photoresponse characteristics for visible blind GaN/AlGaN p-i-n photodiode have been numerically studied. Effects of the absorption layer thickness and the n-layer thickness on the photoresponse spectra have been investigated. Our work shows that the absorption layer thickness and n-layer thickness have important impact on the peak value of photoresponse spectra and rejection ratio of short-wavelength side, respectively.

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2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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