射频功率对射频溅射氧化铜薄膜结构和光学性能的影响

Journal of Physics C: Solid State Physics Pub Date : 2015-06-25 DOI:10.1063/1.4917927

J. Kaur, S. Saipriya, R. Singh

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引用次数: 3

摘要

采用射频磁控溅射技术，在不同射频功率的氩气环境下制备了氧化铜薄膜。研究了射频功率对薄膜结构、形貌和光学性能的影响。沉积薄膜为Cu4O3。gxrd和Raman光谱显示，随着射频功率的增加，CuO相的演化。随着射频功率的增加，光学带隙从2.1 eV减小到1.6 eV。

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Effect of RF power on structure and optical properties of RF sputtered copper oxide thin films

Copper oxide films were fabricated using RF-magnetron sputtering from CuO target in an argon environment at various RF powers. The effect of RF power on structure, morphology and optical properties of the films was studied. As deposited films were Cu4O3. The GIXRD and Raman spectra show the evolution of CuO phase with increasing RF power. The optical band gap decreases from 2.1 to 1.6 eV with increase in RF power.

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Journal of Physics C: Solid State Physics

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