{"title":"利用a-InGaZnO薄膜晶体管设计低压差稳压器","authors":"Yongchan Kim, Hojin Lee","doi":"10.1109/APCCAS.2016.7804025","DOIUrl":null,"url":null,"abstract":"In this paper, we presented a low-dropout (LDO) regulator composed with amorphous indium-gallium-zinc-oxide thin-film transistors (a-InGaZnO TFTs) for display driving systems. Through extensive simulation works, we confirmed that the proposed LDO regulator successfully could control the output voltage levels to follow the reference input voltages, and the output voltage ripple could be suppressed below 48mV when input reference voltage was changed from 14V to 15V with 100mV fluctuation.","PeriodicalId":6495,"journal":{"name":"2016 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","volume":"15 1","pages":"546-547"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of low-dropout regulator using a-InGaZnO thin-film transistors\",\"authors\":\"Yongchan Kim, Hojin Lee\",\"doi\":\"10.1109/APCCAS.2016.7804025\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we presented a low-dropout (LDO) regulator composed with amorphous indium-gallium-zinc-oxide thin-film transistors (a-InGaZnO TFTs) for display driving systems. Through extensive simulation works, we confirmed that the proposed LDO regulator successfully could control the output voltage levels to follow the reference input voltages, and the output voltage ripple could be suppressed below 48mV when input reference voltage was changed from 14V to 15V with 100mV fluctuation.\",\"PeriodicalId\":6495,\"journal\":{\"name\":\"2016 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)\",\"volume\":\"15 1\",\"pages\":\"546-547\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APCCAS.2016.7804025\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APCCAS.2016.7804025","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of low-dropout regulator using a-InGaZnO thin-film transistors
In this paper, we presented a low-dropout (LDO) regulator composed with amorphous indium-gallium-zinc-oxide thin-film transistors (a-InGaZnO TFTs) for display driving systems. Through extensive simulation works, we confirmed that the proposed LDO regulator successfully could control the output voltage levels to follow the reference input voltages, and the output voltage ripple could be suppressed below 48mV when input reference voltage was changed from 14V to 15V with 100mV fluctuation.
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