{"title":"CVD反应的形态和膜生长","authors":"V. Hlavácek, J. Thiart, D. Orlicki","doi":"10.1051/JPHYSCOL:1995501","DOIUrl":null,"url":null,"abstract":"The paper reports on three major aspects of CVD reactor simulation: 1) Modeling of transport phenomena in conventional CVD and their effect on the film growth; 2) Modeling of plasma enhanced CVD and deposition of thin films; 3) Modeling of film growth and analysis of stability and morphology case studies. Case studies involve deposition of boron on W wire, deposition of Si-H and morphology development for a typical CVD reaction. Numerical methods of simulation are discussed in detail for each category mentioned above.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Morphology and Film Growth in CVD Reactions\",\"authors\":\"V. Hlavácek, J. Thiart, D. Orlicki\",\"doi\":\"10.1051/JPHYSCOL:1995501\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper reports on three major aspects of CVD reactor simulation: 1) Modeling of transport phenomena in conventional CVD and their effect on the film growth; 2) Modeling of plasma enhanced CVD and deposition of thin films; 3) Modeling of film growth and analysis of stability and morphology case studies. Case studies involve deposition of boron on W wire, deposition of Si-H and morphology development for a typical CVD reaction. Numerical methods of simulation are discussed in detail for each category mentioned above.\",\"PeriodicalId\":17944,\"journal\":{\"name\":\"Le Journal De Physique Colloques\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Le Journal De Physique Colloques\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1051/JPHYSCOL:1995501\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Le Journal De Physique Colloques","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1051/JPHYSCOL:1995501","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The paper reports on three major aspects of CVD reactor simulation: 1) Modeling of transport phenomena in conventional CVD and their effect on the film growth; 2) Modeling of plasma enhanced CVD and deposition of thin films; 3) Modeling of film growth and analysis of stability and morphology case studies. Case studies involve deposition of boron on W wire, deposition of Si-H and morphology development for a typical CVD reaction. Numerical methods of simulation are discussed in detail for each category mentioned above.
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