氮化镓铝(AlGaN)/氮化镓(GaN)/氮化镓硼(BGaN)高电子迁移率晶体管(HEMT):从常开到常关晶体管

Sensor Letters Pub Date : 2020-05-01 DOI:10.1166/sl.2020.4226

Wafa Maati, A. Hamdoune

{"title":"氮化镓铝(AlGaN)/氮化镓(GaN)/氮化镓硼(BGaN)高电子迁移率晶体管(HEMT):从常开到常关晶体管","authors":"Wafa Maati, A. Hamdoune","doi":"10.1166/sl.2020.4226","DOIUrl":null,"url":null,"abstract":"In this paper, using the simulator TCAD SILVACO, the physical parameters to pass from a normallyon to a normally-off AlGaN/GaN HEMT with a BGaN back-barrier, was studied. With n-doped donor layer at 1 × 1016 cm–3, as a results we obtain a threshold\n voltage of 0.509 V normally-off AlGaN/GaN HEMT. The first transistor is able to operate in high power in better way; the second one is efficient for weak signals up to the X-band, and it has the advantage of being normally-off.","PeriodicalId":21781,"journal":{"name":"Sensor Letters","volume":"25 1","pages":"366-370"},"PeriodicalIF":0.0000,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Aluminium Gallium Nitride (AlGaN)/Gallium Nitride (GaN)/Boron Gallium Nitride (BGaN) High Electron Mobility Transistors (HEMT): From Normally-On to Normally-Off Transistor\",\"authors\":\"Wafa Maati, A. Hamdoune\",\"doi\":\"10.1166/sl.2020.4226\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, using the simulator TCAD SILVACO, the physical parameters to pass from a normallyon to a normally-off AlGaN/GaN HEMT with a BGaN back-barrier, was studied. With n-doped donor layer at 1 × 1016 cm–3, as a results we obtain a threshold\\n voltage of 0.509 V normally-off AlGaN/GaN HEMT. The first transistor is able to operate in high power in better way; the second one is efficient for weak signals up to the X-band, and it has the advantage of being normally-off.\",\"PeriodicalId\":21781,\"journal\":{\"name\":\"Sensor Letters\",\"volume\":\"25 1\",\"pages\":\"366-370\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Sensor Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1166/sl.2020.4226\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensor Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1166/sl.2020.4226","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文利用仿真器TCAD SILVACO，研究了具有BGaN背垒的AlGaN/GaN HEMT从常开到常关的物理参数。在1 × 1016 cm-3的n掺杂给体层中，我们获得了0.509 V常关AlGaN/GaN HEMT的阈值电压。第一个晶体管能够以更好的方式在高功率下工作;第二个是有效的弱信号到x波段，它的优势是正常关闭。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Aluminium Gallium Nitride (AlGaN)/Gallium Nitride (GaN)/Boron Gallium Nitride (BGaN) High Electron Mobility Transistors (HEMT): From Normally-On to Normally-Off Transistor

In this paper, using the simulator TCAD SILVACO, the physical parameters to pass from a normallyon to a normally-off AlGaN/GaN HEMT with a BGaN back-barrier, was studied. With n-doped donor layer at 1 × 1016 cm–3, as a results we obtain a threshold voltage of 0.509 V normally-off AlGaN/GaN HEMT. The first transistor is able to operate in high power in better way; the second one is efficient for weak signals up to the X-band, and it has the advantage of being normally-off.

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来源期刊

Sensor Letters 工程技术-电化学

自引率

0.00%

发文量

审稿时长

6 months

期刊介绍： The growing interest and activity in the field of sensor technologies requires a forum for rapid dissemination of important results: Sensor Letters is that forum. Sensor Letters offers scientists, engineers and medical experts timely, peer-reviewed research on sensor science and technology of the highest quality. Sensor Letters publish original rapid communications, full papers and timely state-of-the-art reviews encompassing the fundamental and applied research on sensor science and technology in all fields of science, engineering, and medicine. Highest priority will be given to short communications reporting important new scientific and technological findings.