AMR传感器各向异性场的测量

2011 IEEE International Conference of Electron Devices and Solid-State Circuits Pub Date : 2011-12-29 DOI:10.1109/EDSSC.2011.6117748

J. Ouyang, S. Chen, Y. Zhang, F. Jin, X. Yang

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引用次数: 1

摘要

各向异性磁阻(AMR)传感器的交叉场效应是对垂直于敏感轴的磁场的不良响应。例如，霍尼韦尔HMC1002传感器在地磁环境[1]下的交叉场误差可达1100 nT。产生这种效应的原因是交叉场会改变AMR膜的磁化方向，从而导致磁电阻的变化。

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Measurement of the anisotropy fields for AMR sensors

Crossfield effect of anisotropic magnetoresistive (AMR) sensors is an unwanted response to magnetic fields perpendicular to the sensitive axis. For example, the crossfield error of Honeywell HMC1002 sensors could reach 1100 nT in geomagnetic environment [1]. The cause of the effect is that crossfields could change the direction of magnetization in AMR film, which results in variation of magnetoresistance.

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2011 IEEE International Conference of Electron Devices and Solid-State Circuits

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