{"title":"InP太阳能电池的表征与建模","authors":"G. Augustine, A.W. Smith, A. Rohatgi, C. Keavney","doi":"10.1109/PVSC.1988.105834","DOIUrl":null,"url":null,"abstract":"InP solar cells were modeled before and after proton irradiation using a PC-1D computer model. It was necessary to include bandgap narrowing in the n/sup +/ emitter to match the calculated and measured quantum efficiency, leakage current, and cell data simultaneously. A high-efficiency ( approximately=18.2%, AM0) InP solar cell was fabricated and modeled successfully. Guidelines are provided for achieving greater than 22% efficiency for InP cells. A 10 MeV proton irradiation with a dose of 2*10/sup 13/ cm/sup -2/ reduces the cell performance of a 16.3% cell to 11% by introducing the deep levels at an E/sub v/ of +0.29 eV and an E/sub v/ of +0.52 eV. Modeling showed that this performance degradation is associated with a decrease in bulk lifetime from 0.75 to 0.028 ns with no appreciable change in front surface recombination velocity.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"903-908 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Characterization and modeling of InP solar cells\",\"authors\":\"G. Augustine, A.W. Smith, A. Rohatgi, C. Keavney\",\"doi\":\"10.1109/PVSC.1988.105834\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"InP solar cells were modeled before and after proton irradiation using a PC-1D computer model. It was necessary to include bandgap narrowing in the n/sup +/ emitter to match the calculated and measured quantum efficiency, leakage current, and cell data simultaneously. A high-efficiency ( approximately=18.2%, AM0) InP solar cell was fabricated and modeled successfully. Guidelines are provided for achieving greater than 22% efficiency for InP cells. A 10 MeV proton irradiation with a dose of 2*10/sup 13/ cm/sup -2/ reduces the cell performance of a 16.3% cell to 11% by introducing the deep levels at an E/sub v/ of +0.29 eV and an E/sub v/ of +0.52 eV. Modeling showed that this performance degradation is associated with a decrease in bulk lifetime from 0.75 to 0.028 ns with no appreciable change in front surface recombination velocity.<<ETX>>\",\"PeriodicalId\":10562,\"journal\":{\"name\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"volume\":\"1 1\",\"pages\":\"903-908 vol.2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1988.105834\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1988.105834","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
InP solar cells were modeled before and after proton irradiation using a PC-1D computer model. It was necessary to include bandgap narrowing in the n/sup +/ emitter to match the calculated and measured quantum efficiency, leakage current, and cell data simultaneously. A high-efficiency ( approximately=18.2%, AM0) InP solar cell was fabricated and modeled successfully. Guidelines are provided for achieving greater than 22% efficiency for InP cells. A 10 MeV proton irradiation with a dose of 2*10/sup 13/ cm/sup -2/ reduces the cell performance of a 16.3% cell to 11% by introducing the deep levels at an E/sub v/ of +0.29 eV and an E/sub v/ of +0.52 eV. Modeling showed that this performance degradation is associated with a decrease in bulk lifetime from 0.75 to 0.028 ns with no appreciable change in front surface recombination velocity.<>