InP太阳能电池的表征与建模

G. Augustine, A.W. Smith, A. Rohatgi, C. Keavney
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引用次数: 6

摘要

利用PC-1D计算机模型对质子辐照前后的InP太阳能电池进行建模。有必要在n/sup +/发射器中包括带隙缩小,以同时匹配计算和测量的量子效率,泄漏电流和电池数据。制备了一种高效(约=18.2%,AM0)的InP太阳能电池,并成功地建立了模型。为实现大于22%的InP电池效率提供了指南。以2*10/sup 13/ cm/sup -2/的剂量进行10 MeV质子辐照,通过引入E/sub v/ +0.29 eV和E/sub v/ +0.52 eV的深层能级,将16.3%的电池性能降低到11%。建模表明,这种性能下降与整体寿命从0.75 ns减少到0.028 ns有关,而前表面复合速度没有明显变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characterization and modeling of InP solar cells
InP solar cells were modeled before and after proton irradiation using a PC-1D computer model. It was necessary to include bandgap narrowing in the n/sup +/ emitter to match the calculated and measured quantum efficiency, leakage current, and cell data simultaneously. A high-efficiency ( approximately=18.2%, AM0) InP solar cell was fabricated and modeled successfully. Guidelines are provided for achieving greater than 22% efficiency for InP cells. A 10 MeV proton irradiation with a dose of 2*10/sup 13/ cm/sup -2/ reduces the cell performance of a 16.3% cell to 11% by introducing the deep levels at an E/sub v/ of +0.29 eV and an E/sub v/ of +0.52 eV. Modeling showed that this performance degradation is associated with a decrease in bulk lifetime from 0.75 to 0.028 ns with no appreciable change in front surface recombination velocity.<>
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CiteScore
1.40
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