氢自由基退火对SiO/ sub2 /钝化的影响

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) Pub Date : 1994-12-05 DOI:10.1109/WCPEC.1994.520500

H. Nagayoshi, M. Yamaguchi, Y. Yamamoto, M. Ikeda, T. Saitoh, K. Kamisako, T. Uematsu

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引用次数: 0

摘要

降低复合速度对于获得高效太阳能电池至关重要，因此SiO/sub /钝化和氢后退火技术被广泛用作表面钝化技术。采用微波氢余辉法对氢自由基后退火进行了研究，结果表明，该方法在极短的退火时间内提高了具有SiO/sub - 2/钝化层的硅片的有效寿命，其程度大于3% H/sub - 2/形成气体退火。

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The effect of hydrogen-radical annealing for SiO/sub 2/ passivation

The reduction of recombination velocity is important in obtaining high-efficiency solar cells, and SiO/sub 2/ passivation and hydrogen post-annealing are therefore widely used as surface passivation techniques. This investigation of hydrogen-radical post-annealing using the microwave hydrogen afterglow method shows that this procedure increases the effective lifetime of silicon wafers with SiO/sub 2/ passivation layers with a very short annealing time to a degree greater than does 3% H/sub 2/ forming gas annealing.

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Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)

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