掺氟对La2O3栅极介质硅MOS电容器电性能的影响

2011 IEEE International Conference of Electron Devices and Solid-State Circuits Pub Date : 2011-12-29 DOI:10.1109/EDSSC.2011.6117657

L. Qian, X. Huang, P. Lai

{"title":"掺氟对La2O3栅极介质硅MOS电容器电性能的影响","authors":"L. Qian, X. Huang, P. Lai","doi":"10.1109/EDSSC.2011.6117657","DOIUrl":null,"url":null,"abstract":"In this work, the effects of fluorine incorporation by using plasma on the electrical properties of Si MOS capacitor with La2O3 gate dielectric are investigated. From the capacitance-voltage (C-V) curve and gate leakage current, it is demonstrated that the F-plasma treatment can effectively suppress the growth of interfacial layer, and thus improve the electrical properties of the device in terms of accumulation capacitance, interface-state density and breakdown voltage.","PeriodicalId":6363,"journal":{"name":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","volume":"44 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Effects of fluorine incorporation on the electrical properties of silicon MOS capacitor with La2O3 gate dielectric\",\"authors\":\"L. Qian, X. Huang, P. Lai\",\"doi\":\"10.1109/EDSSC.2011.6117657\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, the effects of fluorine incorporation by using plasma on the electrical properties of Si MOS capacitor with La2O3 gate dielectric are investigated. From the capacitance-voltage (C-V) curve and gate leakage current, it is demonstrated that the F-plasma treatment can effectively suppress the growth of interfacial layer, and thus improve the electrical properties of the device in terms of accumulation capacitance, interface-state density and breakdown voltage.\",\"PeriodicalId\":6363,\"journal\":{\"name\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"volume\":\"44 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2011.6117657\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2011.6117657","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文研究了等离子体掺入氟对La2O3栅极介质Si MOS电容器电性能的影响。从电容-电压(C-V)曲线和栅漏电流可知，f等离子体处理可以有效抑制界面层的生长，从而提高器件在积累电容、界面态密度和击穿电压方面的电学性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effects of fluorine incorporation on the electrical properties of silicon MOS capacitor with La2O3 gate dielectric

In this work, the effects of fluorine incorporation by using plasma on the electrical properties of Si MOS capacitor with La2O3 gate dielectric are investigated. From the capacitance-voltage (C-V) curve and gate leakage current, it is demonstrated that the F-plasma treatment can effectively suppress the growth of interfacial layer, and thus improve the electrical properties of the device in terms of accumulation capacitance, interface-state density and breakdown voltage.

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2011 IEEE International Conference of Electron Devices and Solid-State Circuits

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