{"title":"溶胶-凝胶自旋涂覆铟掺杂氧化镉薄膜的结构和电学性能","authors":"R. Rajammal, E. Savarimuthu, S. Arumugam","doi":"10.1063/1.4872839","DOIUrl":null,"url":null,"abstract":"The indium doped CdO thin films have been prepared by the sol-gel spin coating technique and the influence of indium doping concentration on the structural and electrical properties of the deposited films has been investigated. The indium doping concentration in the solution has been varied from 0-10 wt% insteps of 2wt%. A indium doping concentration of 6wt% has been found to be optimum for preparing the films and at this stage a minimum resistivity of 5.92×10−4Ω cm and a maximum carrier concentration of 1.20×1020cm−3 have been realized.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"29 1","pages":"1021-1023"},"PeriodicalIF":0.0000,"publicationDate":"2014-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural and electrical properties of sol-gel spin coated indium doped cadmium oxide thin films\",\"authors\":\"R. Rajammal, E. Savarimuthu, S. Arumugam\",\"doi\":\"10.1063/1.4872839\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The indium doped CdO thin films have been prepared by the sol-gel spin coating technique and the influence of indium doping concentration on the structural and electrical properties of the deposited films has been investigated. The indium doping concentration in the solution has been varied from 0-10 wt% insteps of 2wt%. A indium doping concentration of 6wt% has been found to be optimum for preparing the films and at this stage a minimum resistivity of 5.92×10−4Ω cm and a maximum carrier concentration of 1.20×1020cm−3 have been realized.\",\"PeriodicalId\":16850,\"journal\":{\"name\":\"Journal of Physics C: Solid State Physics\",\"volume\":\"29 1\",\"pages\":\"1021-1023\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-04-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Physics C: Solid State Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1063/1.4872839\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics C: Solid State Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.4872839","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Structural and electrical properties of sol-gel spin coated indium doped cadmium oxide thin films
The indium doped CdO thin films have been prepared by the sol-gel spin coating technique and the influence of indium doping concentration on the structural and electrical properties of the deposited films has been investigated. The indium doping concentration in the solution has been varied from 0-10 wt% insteps of 2wt%. A indium doping concentration of 6wt% has been found to be optimum for preparing the films and at this stage a minimum resistivity of 5.92×10−4Ω cm and a maximum carrier concentration of 1.20×1020cm−3 have been realized.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
