{"title":"三维ZnO纳米线光电探测器","authors":"C. Lu, Y. H. Chen, S. J. Chang, T. Hsueh","doi":"10.1109/NANO.2016.7751326","DOIUrl":null,"url":null,"abstract":"A ZnO-nanowire photodetector was prepared using three-dimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 μm and 175 μm, respectively. Cu uniformly filled in each TSV, whose average resistance was about 1 mΩ. Upon illumination with UV light (= 330 nm), it was found that measured responsivities is 7.38×10-3 A/W for the 3D TSV ZnO nanowire photodetector biased at 8 V. Furthermore, a rejection ratio of approximately 170 was obtained for the 3D TSV ZnO nanowire photodetector with an applied bias of 8 V.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"72 1","pages":"67-69"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A three-dimensional ZnO nanowires photodetector\",\"authors\":\"C. Lu, Y. H. Chen, S. J. Chang, T. Hsueh\",\"doi\":\"10.1109/NANO.2016.7751326\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A ZnO-nanowire photodetector was prepared using three-dimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 μm and 175 μm, respectively. Cu uniformly filled in each TSV, whose average resistance was about 1 mΩ. Upon illumination with UV light (= 330 nm), it was found that measured responsivities is 7.38×10-3 A/W for the 3D TSV ZnO nanowire photodetector biased at 8 V. Furthermore, a rejection ratio of approximately 170 was obtained for the 3D TSV ZnO nanowire photodetector with an applied bias of 8 V.\",\"PeriodicalId\":6646,\"journal\":{\"name\":\"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)\",\"volume\":\"72 1\",\"pages\":\"67-69\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-11-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO.2016.7751326\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2016.7751326","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A ZnO-nanowire photodetector was prepared using three-dimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 μm and 175 μm, respectively. Cu uniformly filled in each TSV, whose average resistance was about 1 mΩ. Upon illumination with UV light (= 330 nm), it was found that measured responsivities is 7.38×10-3 A/W for the 3D TSV ZnO nanowire photodetector biased at 8 V. Furthermore, a rejection ratio of approximately 170 was obtained for the 3D TSV ZnO nanowire photodetector with an applied bias of 8 V.
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