{"title":"弹道输运纳米mosfet的载流子相关研究","authors":"Xiaofei Jia, Liang He","doi":"10.2174/1874088X01711010038","DOIUrl":null,"url":null,"abstract":"In this paper,the experiment proved that shot noise is suppressed by Fermi and Coulomb interaction correlation. Meanwhile, the establishment of shot noise suppression factor (Fano) in ballistic transport nano-MOSFETs the Coulomb interaction correlation and the combination of the two effects are derived from separately considering the Fermi interaction correlation. And on this basis the variation of Fano with voltage, doping concentration and temperature are investigated.","PeriodicalId":22791,"journal":{"name":"The Open Materials Science Journal","volume":"28 1","pages":"38-46"},"PeriodicalIF":0.0000,"publicationDate":"2017-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Research on Carrier Correlation in Ballistic Transport Nano-MOSFETs\",\"authors\":\"Xiaofei Jia, Liang He\",\"doi\":\"10.2174/1874088X01711010038\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper,the experiment proved that shot noise is suppressed by Fermi and Coulomb interaction correlation. Meanwhile, the establishment of shot noise suppression factor (Fano) in ballistic transport nano-MOSFETs the Coulomb interaction correlation and the combination of the two effects are derived from separately considering the Fermi interaction correlation. And on this basis the variation of Fano with voltage, doping concentration and temperature are investigated.\",\"PeriodicalId\":22791,\"journal\":{\"name\":\"The Open Materials Science Journal\",\"volume\":\"28 1\",\"pages\":\"38-46\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-09-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Open Materials Science Journal\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.2174/1874088X01711010038\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Open Materials Science Journal","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2174/1874088X01711010038","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Research on Carrier Correlation in Ballistic Transport Nano-MOSFETs
In this paper,the experiment proved that shot noise is suppressed by Fermi and Coulomb interaction correlation. Meanwhile, the establishment of shot noise suppression factor (Fano) in ballistic transport nano-MOSFETs the Coulomb interaction correlation and the combination of the two effects are derived from separately considering the Fermi interaction correlation. And on this basis the variation of Fano with voltage, doping concentration and temperature are investigated.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
