Zongjie Shen, Chun Zhao, I. Mitrovic, Cezhou Zhao, Yina Liu, Li Yang
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Resistive switching performance of memristor with solution-processed stacked MO/2D-materials switching layers
In this work, the RRAM device with the structure of Ag/AlOx/MXene/ITO was fabricated with the stacked solution-processed switching layers. The device operated with a low voltage around ~2.0 V and exhibited a stable ON/OFF ratio larger than 104. Apart from excellent stability with endurance cycles of more than 100 and retention time of longer than 104 s, typical synaptic behaviors including long-term potentiation and depression (LTP/LTD) were also obtained, which had a positive influence on the following pattern recognition process and the average value of the recognition was around ~90%.
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