非均匀二维莫特-格尼定律

2013 Abstracts IEEE International Conference on Plasma Science (ICOPS) Pub Date : 2013-06-16 DOI:10.1109/PLASMA.2013.6634947

Y. Zhu, L. Ang

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引用次数: 1

摘要

对于高电荷注入固体介质，一维电流密度用经典的Mott-Gurney (MG)定律描述无陷阱固体和Mark-Helfrich (HF)定律描述填充陷阱固体。近年来，由于纳米技术的发展，在许多实验中观察到几何电流增强，如纳米线中的电子传递。本文提出了一种求解二维空间电荷限流问题的数值方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Nonuniform 2D Mott-Gurney law

For high charge injection into a solid dielectric, the 1D current density is described by the classical Mott-Gurney (MG) law for trap-free solid and Mark-Helfrich (HF) law for trap-filled solid. Recently, due to the development of nanotechnology, the geometry current enhancement is observed in many experiment, such as electron transport in nanowire. In this paper, we develop a numerical method to solved the 2D space charge limited current problem.

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2013 Abstracts IEEE International Conference on Plasma Science (ICOPS)

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